NEEM 6433 Plasma-Assisted Microelectronics Processing (IC 734)

Note: The following provides a suggested course description, objectives, and an outline. These may be modified pending discussion with the Faculty Chairs, proposing faculty, and other curriculum reviewers.

Course Description: The course will develop a basic knowledge of plasma processing physics and chemistry. It will survey the state-of-the-art of plasma processing technology including high density plasma sources, plasma diagnostic techniques, and numerical modeling. Several examples of industrial plasma processes will be covered in depth including silicon sub-micrometer etching, III-V semiconductor etching, and plasma-assisted chemical vapor deposition of diamond.

Course Objectives: The course is intended to give graduate students, as well as practicing scientists and engineers, a fundamental knowledge of plasma-assisted materials processing and an understanding of state-of-the-art plasma processing technology and applications. The content is designed for both physics, chemical physics, materials science, chemical engineering or electrical engineering.

Course Outline by Topical Areas:

Introduction: Overview of Plasma Assisted Materials Processing
Plasma Physics Basics
Basic plasma equations
Charged particle dynamics
Diffusion and transport
Plasma sheaths
Plasma Chemistry Basics
Atomic and molecular collisions
Plasma reactions
Reaction rates
Plasma-surface reactions
Plasma Sources
DC discharges
Capacitive discharges
Inductive discharges
Electron-cyclotron resonance discharges
Helicon discharges
Plasma Etching Basics
Silicon etching
III-V semiconductor etching
Plasma-Assisted Deposition
Basics; CVD and sputtering processes
Diamond deposition
Large Area Plasma-Assisted Processing
Plasma Processing Diagnostics Methods
Electrostatic probes
Ion energy analyzers
Optical diagnostics
In-situ surface diagnostics
Modeling of Plasma Processes
Future Issues in Plasma Processing