Course Description: Introduction to the bipolar and
MOSFET semiconductor process. Theory and practice of the major unit
processes used in modern silicon device processing. For example:
oxidation; diffusion; ion implantation; Deep-UV, phase-shift, UV, electron
and X-ray lithography; metal and oxide deposition; aqueous, plasma and
reactive ion etching; chemical mechanical polishing; and wet-cleaning for
front-end- and back-end-of-the-line. Issues relating to performance
integration; how subsequent and prior process steps affect a fabrication
sequence; limiting process steps in producing devices for the Gigabit era.
Course Objectives: Explain the process sequence for
BJT, MOSFET and CMOS devices; explain the crystal structure of silicon
wafers; understand the theory of oxidation, diffusion, and ion
implantation systems; calculate process schedules from required layer
thicknesses, impurity profiles and other conditions, or vice-versa;
understanding the theory of optical, X-ray and E-beam lithography;
understand the theory of wet cleaning and chemical mechanical polishing;
understand the theory of wet etching, plasma etching and reactive ion
etching; understand the theory of sputtering chemical vapor deposition,
low pressure chemical vapor deposition, metallorganic chemical vapor
deposition and plasma enhanced chemical vapor deposition; understand the
key issues in process integration and in the limits of submicron device
manufacture.
Course Outline by Topical Areas:
| Silicon: Structure and Properties
|
| Advanced Processing Issues
|
