Note: The following provides a suggested course description, objectives, and an outline. These may be modified pending discussion with the Faculty Chairs, proposing faculty, and other curriculum reviewers.

Course Description: Thermodynamics of vacancies and interstitials, defect complexes, electronic defects, defect annealing processes, transient diffusion, self diffusion, dopant and impurity diffusion, substitutional/interstitial diffusion, diffusion in amorphous solids, electro transport, fundamentals of ion-solid interactions, semiconductor doping atomic structure of defects, damage annealing, ion beam mixing phenomena, ion implementation and rapid thermal annealing processes, shallow junctions and devices.

Course Objectives: Ion Implantation is a well-established method of doping semiconductors and near-surface alloying of many materials. The implantation involves the introduction of energetic species/alloy elements into materials to a desired concentration. Graduate students, particularly in electronic materials, need a basic understanding of ion-solid interaction and associated processes. These processes include production of defects, diffusion and annealing processes. During annealing, the amount of damage must be minimized and the substitutional fraction of dopants be increased to achieve the desired electrical activation of dopants. As the size of electronic devices decreases to submicron levels, advanced annealing/processing methods with minimum thermal budget are required. These methods can be designed only with a good understanding of the nature of ion implantation damage and annealing characteristics of different ion implantation states. This course will be useful to all graduate students and researchers who are interested in next-generation device processing, integrated circuit fabrication, surface alloying advanced processing and properties of electronic materials.

Course Outline by Topical Areas:

• Defects: Thermodynamics of Vacancies and Interstitials; Defect Complexes; Electronic Defects; Interactions between Charged Defects; Properties of Vacancies; Properties of Interstitials; Defect Annealing Processes
• Diffusion: Atomic Theory of Diffusion; Self Diffusion in Si and Ge; Dopant Diffusion; Interstitials Diffusion (Alkali, inert, and transition metals); Effects due to Charged Defects; Diffusion by Divacancies; Substitutional/Interstitial Diffusion; Diffusion in Amorphous Phase; Practical Problems of Diffusion in Semiconductors
• Ion Implantation Damage and Annealing Processes: 1) Fundamentals of Ion-Solid Interactions - Ion Ranges and Range Straggling; Damage Production, Accumulation and Amorphization, Ion Implantation/Substrate Variables 2) Damage Annealing Processes - Solid-Phase-Epitaxial Growth; Atomistics of Growth; Formation of Supersaturated Semiconductor Alloys; Rapid thermal Annealing Mechanisms; Pulsed Laser Annealing; Mixing Phenomena (Ion Beam and Laser)