NEEI-6311 Semiconductor Device Modeling
(IC 727)
Note: The following provides a suggested course description,
objectives, and an outline. These may be modified pending discussion with
the Faculty Chairs, proposing faculty, and other curriculum reviewers.
Course Description: This course offers an introduction
to numerical modeling of semiconductor devices. Today, computer-aided
design has become an affordable and, in fact, necessary tool for designing
contemporary semiconductor devices. With emphasis on numerical methods,
this course provides basic concepts and design tools for analyzing
discrete two-dimensional devices such as Schottky diodes, MESFETs,
MOSFETs, BJTs, and HBTs.
Course Objectives: To enable students to perform
analysis of device structures and behaviors using modeling software.
Course Outline by Topical Areas:
- Review of Semiconductor Physics; Basic Semiconductor Equations:
Poisson's equations, current continuity equations, and boundary
conditions
- The Physical Parameters: doping profiles, carrier mobility,
generation-recombination rates, bandgap narrowing effect, other physical
parameters
- Numerical Solution Methods - Part I: Scaling of variables and
parameters, finite difference scheme, discretization of Poisson's and
current continuity equations, truncation errors, discretization of
time-dependent problems, designing a mesh
- Numerical Solution Methods - Part II: The Newton-Raphson method of
solving nonlinear algebraic equations, direct methods of matrix
inversion, iterative and other methods, rate of convergence, error
estimation
- Examples of Actual Device Modeling: numerical treatment of boundary
conditions; general procedures of device modeling, short channel effects
in MOSFET's, breakdown voltage in Si-P-Pai-neu diodes, permeable base
transistor (PBT)
- Monte Carlo Simulation; the Boltzmann transport equation, electron
motion in the momentum space, determination of free-flight time,
selection of scattering processes, scattering rates, selection of
momentum states after collisions, mean velocity and mean energy, Monte
Carlo Simulation of BJT's, Nonisothermal and Hot-Carrier Problems
- Heat transfer equation, discretization of energy balance equations,
applications to hot-carrier phenomena
- Modeling of Heterojunction Devices: bandgap engineering, bandgap
offset at abrupt heterojunctions, modified current continuity equations,
material parameters; heterojunction bipolar transistors (HBT's
- The Schrodinger-Poisson solver: modeling of inversion layer charges
in MOS devices
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