NEEC-6302 Principles and Characteristics of MOS Devices (IC 724) 

Note: The following provides a suggested course description, objectives, and an outline. These may be modified pending discussion with the Faculty Chairs, proposing faculty, and other curriculum reviewers.

Course Description: This is a second-level graduate that course will build a strong theoretical foundation as well as an intuitive understanding of the most important behaviors of MOSFETs. Topics are chosen to highlight the limitations and promises of aggressively scaled MOSFETs and many examples are taken from the critical issues facing the semiconductor industry. Content of the course will emphasize the physical principles and operational characteristics of semiconductor devices; modeling for circuit design, high-field and hot carrier effects. There is advanced discussion of field-effect transistors with an emphasis on the behavior dictated by present and probable future technologies. The course is suitable for junior as well as experienced engineers.

Course Objectives: This course will help the students acquire a deep understanding of MOSFET, which is the most important device for integrated circuits. This is likely the most advanced course on this topic that students will encounter. It should prepare students for research or development of device technology or digital or analog circuits for many years to come.

Course Outline by Topical Areas:

• Advanced theory of MOS capacitor
• Advanced theory of MOS capacitor
• MOSFET IV characteristics and models
• Short channel MOSFET model
• Inversion layer mobility and velocity saturation
• Isolation technology
• Subthreshold leakage
• Short-channel effect
• Device model for analog and digital design
• Silicon-On-Insulator
• Hot electron effects
• CMOS well technology
• Thin gate oxide reliability